Novel nanomanufacturing methods for bottom-up III-V nanowires and van der Waals epitaxy of monolayer MoS2 - Kyooho Jung (2016)

A-IGZO FETs with High Current and Remarkable Stability for Vertical Channel Transistor(VCT) / 3D DRAM Applications. - Jee-Eun Yang; Younjin Jang; Narae Han; Ha-Jun Sung; Jung-kyun Kim; Youngkwan Cha; Kwang-Hee Lee; Kyooho Jung; Moonil Jung; Wonsok Lee; Min Hee Cho; Sangwook Kim (VLSI Technology and Circuits, 2024)

Highly Enhanced Memory Window of 17.8V in Ferroelectric FET with IGZO Channel via Introduction of Intermediate Oxygen-Deficient Channel and Gate Interlayer. - Sijung Yoo; Donghoon Kim; Duk-Hyun Choe; Hyun Jae Lee; Yunseong Lee; Sanghyun Jo; Yoonsang Park; Ki Hong Kim; Kyooho Jung; Moonil Jung; Kwang-Hee Lee; Jee-Eun Yang; et al. (VLSI Technology and Circuits, 2024)