GaAs metamorphic high electron mobility transistors for future deep space-biomedical-millitary and communication system applications: A review. - J. Ajayan; D. Nirmal; P. Mohankumar; Dheena Kuriyan; A. S. Augustine Fletcher; L. Arivazhagan; B. Santhosh Kumar (Microelectron. J., 2019)

Nanosheet field effect transistors-A next generation device to keep Moore's law alive: An intensive study. - J. Ajayan; D. Nirmal; Shubham Tayal; Sandip Bhattacharya; L. Arivazhagan; A. S. Augustine Fletcher; P. Murugapandiyan; D. Ajitha (Microelectron. J., 2021)

Current collapse degradation in GaN High Electron Mobility Transistor by virtual gate. - D. Godfrey; D. Nirmal; L. Arivazhagan; D. Godwinraj; N. Mohan Kumar; Yulin Chen; Wenkuan Yeh (Microelectron. J., 2021)