Endurance Evaluation on OTS-PCM Device using Constant Current Stress Scheme. - Wei-Chih Chien; Lynne M. Gignac; Y. C. Chou; C. H. Yang; N. Gong; H. Y. Ho; C. W. Yeh; H. Y. Cheng; W. Kim; I. T. Kuo; E. K. Lai; C. W. Cheng; et al. (IRPS, 2022)

Reliable Sub-nanosecond MRAM with Double Spin-torque Magnetic Tunnel Junctions. - C. Safranski; Guohan Hu; J. Z. Sun; P. Hashemi; S. L. Brown; L. Buzi; C. P. D'Emic; E. R. J. Edwards; Eileen A. Galligan; M. G. Gottwald; O. Gunawan; S. Karimeddiny; et al. (VLSI Technology and Circuits, 2022)

A Comprehensive Study on the Pillar Size of OTS-PCM Memory with an Optimized Process and Scaling Trends Down to Sub-10 nm for SCM Applications. - Wei-Chih Chien; E. K. Lai; L. Buzi; C. W. Cheng; C. W. Yeh; A. Ray; Lynne M. Gignac; N. Gong; Huai-Yu Cheng; Alexander Grun; D. Y. Lee; W. Kim; et al. (IMW, 2023)

A Novel Chalcogenide Based CuGeSe Selector Only Memory (SOM) for 3D Xpoint and 3D Vertical Memory Applications. - Wei-Chih Chien; J. X. Zheng; C. W. Yeh; Lynne M. Gignac; H. Y. Cheng; Zhi-Lun Liu; Alexander Grun; C. L. Sung; E. K. Lai; S. Cheng; C. W. Cheng; L. Buzi; et al. (VLSI Technology and Circuits, 2024)

Enhancing 3D XPT/SOM Reliability: Strategies for Mitigating Spike Current and Improving Read Endurance. - C. L. Sung; D. Daudelin; Wei-Chih Chien; R. C. Jordan; S. Cheng; Lynne M. Gignac; Douglas M. Bishop; C. W. Yeh; L. Buzi; C. W. Cheng; J. X. Zheng; E. K. Lai; et al. (IMW, 2025)