Optimization of HfSiON using a design of experiment (DOE) approach on 0.45 V Vt Ni-FUSI CMOS transistors. - A. Rothschild; R. Mitsuhashi; Christoph Kerner; X. Shi; J. L. Everaert; L. Date; Thierry Conard; Olivier Richard; C. Vrancken; R. Verbeeck; Anabela Veloso; A. Lauwers; et al. (Microelectron. Reliab., 2007)