Technology and design of GaN power devices. - Peter Moens; Abhishek Banerjee 003; P. Coppens; Aurore Constant; Piet Vanmeerbeek; Z. Li; F. Declercq; L. De Schepper; H. De Vleeschouwer; C. Liu; B. Padmanabhan; W. Jeon; et al. (ESSDERC, 2015)

The Concept of Safe Operating Area for Gate Dielectrics: the SiC/SiO2 Case Study. - Peter Moens; F. Geenen; L. De Schepper; JF Cano; J. Lettens; S. Maslougkas; J. Franchi; Martin Domeij (IRPS, 2023)

Threshold Voltage Drift and Recovery of SiC Trench MOSFETs During TDDB Stress. - M. Avramenko; L. De Schepper; J.-F. Cano; F. Geenen; Peter Moens; Alberto Marcuzzi; Carlo De Santi; Matteo Meneghini (IRPS, 2024)