On the reliability assessment of trench fieldstop IGBT under atmospheric neutron spectrum. - Antoine D. Touboul; L. Foro; Frederic Wrobel; Frédéric Saigné (Microelectron. Reliab., 2012)

Transient device simulation of neutron-induced failure in IGBT: A first step for developing a compact predictive model. - K. Guetarni; Antoine D. Touboul; Jerome Boch; L. Foro; A. Privat; Alain Michez; J.-R. Vaillé; Frédéric Saigné (Microelectron. Reliab., 2013)