Correlation of failure mechanism of constant-current-stress and constant-voltage-stress breakdowns in ultrathin gate oxides of nMOSFETs by TEM. - Kin Leong Pey; C. H. Tung; M. K. Radhakrishnan; L. J. Tang; Y. Sun; X. D. Wang; W. H. Lin (Microelectron. Reliab., 2003)

Impact of barrier deposition process on electrical and reliability performance of Cu/CVD low k SiOCH metallization. - C. F. Tsang; C. Y. Li; A. Krishnamoorthy; Y. J. Su; H. Y. Li; L. Y. Wong; W. H. Li; L. J. Tang; K. Y. Ee (Microelectron. J., 2004)

Structure of the oxide damage under progressive breakdown. - Felix Palumbo; G. Condorelli; Salvatore Lombardo; Kin Leong Pey; C. H. Tung; L. J. Tang (Microelectron. Reliab., 2005)