Extending HKMG scaling on CMOS with FDSOI: Advantages and integration challenges. - D. H. Triyoso; Rick Carter; J. Kluth; K. Hempel; M. Gribelyuk; L. Kang; A. Kumar; Bob Mulfinger; P. Javorka; K. Punchihewa; A. Child; T. McArdle; et al. (ICICDT, 2016)

Characterization of atomic layer deposited low-k spacer for FDSOI high-k metal gate transistor. - D. H. Triyoso; G. R. Mulfinger; K. Hempel; H. Tao; F. Koehler; L. Kang; A. Kumar; T. McArdle; J. Holt; A. L. Child; S. Straub; F. Ludwig; et al. (ICICDT, 2017)