Analysis of BTI in 300 mm integrated dual-gate WS2 FETs. - L. Panarella; Quentin Smets; Devin Verreck; Tom Schram; Daire Cott; I. Asselberghs; Ben Kaczer (DRC, 2022)

Impact of gate stack processing on the hysteresis of 300 mm integrated WS2 FETs. - L. Panarella; Ben Kaczer; Quentin Smets; Devin Verreck; Tom Schram; Daire Cott; Dennis Lin; Stanislav Tyaginov; I. Asselberghs; Cesar J. Lockhart de la Rosa; Gouri Sankar Kar; Valeri Afanas'ev (IRPS, 2023)