High-K dielectric deposition in 3D architectures: The case of Ta2O5 deposited with metal-organic precursor TBTDET. - L. Pinzelli; M. Gros-Jean; Y. Bréchet; F. Volpi; A. Bajolet; J.-C. Giraudin (Microelectron. Reliab., 2007)

Impact of a 10nm Ultra-Thin BOX (UTBOX) and Ground Plane on FDSOI devices for 32nm node and below. - Claire Fenouillet-Béranger; P. Perreau; S. Denorme; L. Tosti; François Andrieu; Olivier Weber; S. Barnola; C. Arvet; Y. Campidelli; Sébastien Haendler; R. Beneyton; C. Perrot; et al. (ESSCIRC, 2009)

Challenges and opportunity in performance, variability and reliability in sub-45 nm CMOS technologies. - Franck Arnaud; L. Pinzelli; C. Gallon; M. Rafik; P. Mora; Frédéric Boeuf (Microelectron. Reliab., 2011)