Impact of a 10nm Ultra-Thin BOX (UTBOX) and Ground Plane on FDSOI devices for 32nm node and below. - Claire Fenouillet-Béranger; P. Perreau; S. Denorme; L. Tosti; François Andrieu; Olivier Weber; S. Barnola; C. Arvet; Y. Campidelli; Sébastien Haendler; R. Beneyton; C. Perrot; et al. (ESSCIRC, 2009)

Scaling of Trigate nanowire (NW) MOSFETs Down to 5 nm Width: 300 K transition to Single Electron Transistor, challenges and opportunities. - Veeresh Deshpande; Sylvain Barraud; Xavier Jehl; Romain Wacquez; Maud Vinet; Remi Coquand; B. Roche; B. Voisin; François Triozon; C. Vizioz; L. Tosti; Bernard Previtali; et al. (ESSDERC, 2012)

Characterization and development of NUV SiPMs for INFN optical modules for the SCT Medium Size Telescope proposed for the CTA Observatory. - Giovanni Ambrosi; M. Ambrosio; Carla Aramo; B. Bertucci; Elisabetta Bissaldi; M. Bitossri; A. Boiano; Carmela Bonavolontà; M. Caprai; Leonardo Di Venere; E. Fiandrini; N. Giglietto; et al. (IWASI, 2019)