Study of total ionizing dose induced read bit errors in magneto-resistive random access memory. - Haohao Zhang; Jinshun Bi; Haibin Wang; Hongyang Hu; Jin Li; Lanlong Ji; Ming Liu 022 (Microelectron. Reliab., 2016)

Simulations of single event effects on the ferroelectric capacitor-based non-volatile SRAM design. - Jianjian Wang; Jinshun Bi; Gang Liu; Hua Bai; Kai Xi; Bo Li 051; Sandip Majumdar; Lanlong Ji; Ming Liu 022; Zhangang Zhang (Sci. China Inf. Sci., 2021)

Total ionizing dose effects on aluminum oxide/zirconium-doped hafnium oxide stack ferroelectric tunneling junctions. - Xueqin Yang; Yannan Xu; Jinshun Bi; Kai Xi; Linjie Fan; Lanlong Ji; Gaobo Xu (Sci. China Inf. Sci., 2022)

Ultrathin HfO2/Al2O3 bilayer based reliable 1T1R RRAM electronic synapses with low power consumption for neuromorphic computing. - Qiang Wang 025; Yankun Wang; Ren Luo; Jianjian Wang; Lanlong Ji; Zhuangde Jiang; Christian Wenger; Zhitang Song; Sannian Song; Wei Ren; Jinshun Bi; Gang Niu 006 (Neuromorph. Comput. Eng., 2022)