New degradation mechanism observed for AlGaN/GaN HEMTs with sub 100 nm scale unpassivated regions around the gate periphery. - Ponky Ivo; Eunjung Melanie Cho; Przemyslaw Kotara; Lars Schellhase; Richard Lossy; Ute Zeimer; Anna Mogilatenko; Joachim Würfl; Günther Tränkle; Arkadiusz Glowacki; Christian Boit (Microelectron. Reliab., 2014)