Dispersion, High-Frequency and Power Characteristics of AlN/GaN Metal Insulator Semiconductor Field Effect Transistors with in-situ MOCVD Deposited Si3N4. - Sanghyun Seo; Eunjung Cho; Giorgi Aroshvili; Chong Jin; Dimitris Pavlidis; Laurence Considine (IEICE Trans. Electron., 2010)

DC and High-Frequency Characteristics of GaN Schottky Varactors for Frequency Multiplication. - Chong Jin; Dimitris Pavlidis; Laurence Considine (IEICE Trans. Electron., 2012)

Prospective for Gallium Nitride-Based Optical Waveguide Modulators. - Arnaud Stolz; Laurence Considine; Elhadj Dogheche; Didier Decoster; Dimitris Pavlidis (IEICE Trans. Electron., 2012)