Optimization of inter-gate-dielectrics in hybrid float gate devices to reduce window instability during memory operations. - Baojun Tang; Weidong Zhang 002; Laurent Breuil; Colin Robinson; Yunqi Wang; Maria Toledano-Luque; Geert Van den Bosch; Jianfu Zhang 001; Jan Van Houdt (Microelectron. Reliab., 2014)

First demonstration of ferroelectric Si: HfO2 based 3D FE-FET with trench architecture for dense nonvolatile memory application. - K. Banerjee; Laurent Breuil; A. P. Milenin; M. Pak; J. Stiers; Sean R. C. McMitchell; L. Di Piazza; Geert Van den Bosch; Jan Van Houdt (IMW, 2021)

Understanding the memory window in 1T-FeFET memories: a depolarization field perspective. - K. Kaczmarek; Marie Garcia Bardon; Y. Xiang; Laurent Breuil; Nicolo Ronchi; Bertrand Parvais; Guido Groeseneken; Jan Van Houdt (IMW, 2021)

High-K incorporated in a SiON tunnel layer for 3D NAND programming voltage reduction. - Laurent Breuil; L. Nyns; S. Rachidi; K. Banerjee; Antonio Arreghini; J. P. Bastos; S. Ramesh; Geert Van den Bosch; Maarten Rosmeulen (IMW, 2022)

Optimization of Retention in Ferroelectricity Boosted Gate Stacks for 3D NAND. - Laurent Breuil; Mihaela Ioana Popovici; J. Stiers; Antonio Arreghini; S. Ramesh 005; Geert Van den Bosch; Jan Van Houdt; Maarten Rosmeulen (IMW, 2023)

Enabling 3D NAND Trench Cells for Scaled Flash Memories. - S. Rachidi; S. Ramesh; Laurent Breuil; Z. Tao; Devin Verreck; G. L. Donadio; Antonio Arreghini; Geert Van den Bosch; Maarten Rosmeulen (IMW, 2023)

Gate Side Injection Operating Mode for 3D NAND Flash Memories. - Laurent Breuil; R. Izmailov; Mihaela Ioana Popovici; J. Stiers; Antonio Arreghini; S. Ramesh; Geert Van den Bosch; Jan Van Houdt; Maarten Rosmeulen (IMW, 2024)

Investigation of the Impact of Ferroelectricity Boosted Gate Stacks for 3D NAND on Short Time Data Retention and Endurance. - Yusuke Higashi; J. P. Bastos; Adrian Vaisman Chasin; Laurent Breuil; Antonio Arreghini; S. Ramesh; S. Rachidi; Y. Jeong; Geert Van den Bosch; Maarten Rosmeulen (IRPS, 2024)

Advanced RTN Analysis on 3D NAND Trench Devices Using Physics-Informed Machine Learning Framework. - Yusuke Higashi; Anirudh Varanasi; Philippe J. Roussel; Pablo Saraza-Canflanca; J. P. Bastos; Alexander Grill; E. Catapano; R. Asanovski; Jacopo Franco; Ben Kaczer; Adrian Chasin; Devin Verreck; et al. (IRPS, 2025)