Kink effect characterization in AlGaN/GaN HEMTs by DC and drain current transient measurements. - Laurent Brunel; Nathalie Malbert; Arnaud Curutchet; Nathalie Labat; Benoit Lambert (ESSDERC, 2012)

Evidence of relationship between mechanical stress and leakage current in AlGaN/GaN transistor after storage test. - Benoit Lambert; Nathalie Labat; Dominique Carisetti; Serge Karboyan; Jean-Guy Tartarin; Jim Thorpe; Laurent Brunel; Arnaud Curutchet; Nathalie Malbert; Eddy Latu-Romain; Michel Mermoux (Microelectron. Reliab., 2012)

Analysis of Schottky gate degradation evolution in AlGaN/GaN HEMTs during HTRB stress. - Laurent Brunel; Benoit Lambert; P. Mezenge; J. Bataille; D. Floriot; Jan Grünenpütt; Hervé Blanck; D. Carisetti; Y. Gourdel; Nathalie Malbert; Arnaud Curutchet; Nathalie Labat (Microelectron. Reliab., 2013)

Influence of gate leakage current on AlGaN/GaN HEMTs evidenced by low frequency noise and pulsed electrical measurements. - S. Karboyan; Jean-Guy Tartarin; M. Rzin; Laurent Brunel; Arnaud Curutchet; Nathalie Malbert; Nathalie Labat; D. Carisetti; Benoit Lambert; M. Mermoux; E. Romain-Latu; F. Thomas; et al. (Microelectron. Reliab., 2013)

Investigation of the dynamic on-state resistance of AlGaN/GaN HEMTs. - M. Rzin; Nathalie Labat; Nathalie Malbert; Arnaud Curutchet; Laurent Brunel; Benoit Lambert (Microelectron. Reliab., 2015)