Extremely thin SOI for system-on-chip applications. - Ali Khaki-Firooz; Kangguo Cheng; Qing Liu; Toshiharu Nagumo; Nicolas Loubet; Alexander Reznicek; James Kuss; J. Gimbert; Raghavasimhan Sreenivasan; Maud Vinet; Laurent Grenouillet; Yannick Le Tiec; et al. (CICC, 2012)

Variability in Fully Depleted MOSFETs. - Maud Vinet; T. Hook; Yannick Le Tiec; R. Murphy; Shom Ponoth; Laurent Grenouillet; Romain Wacquez (ICICDT, 2012)

Impact of Si/Al implantation on the forming voltage and pre-forming conduction modes in HfO2 based OxRAM cells. - M. Barlas; Boubacar Traore; Laurent Grenouillet; Stefania Bernasconi; Philippe Blaise; Mouhamad Alayan; Benoit Sklénard; Eric Jalaguier; Philippe Rodriguez; F. Mazen; E. Vilain; M. Guillermet; et al. (ESSDERC, 2016)

Polarization switching and interface charges in BEOL compatible Ferroelectric Tunnel Junctions. - Riccardo Fontanini; Justine Barbot; Mattia Segatto; Suzanne Lancaster; Quang T. Duong; Francesco Driussi; Laurent Grenouillet; François Triozon; Jean Coignus; Thomas Mikolajick; Stefan Slesazeck; David Esseni (ESSDERC, 2021)

16kbit 1T1R OxRAM arrays embedded in 28nm FDSOI technology demonstrating low BER, high endurance, and compatibility with core logic transistors. - Laurent Grenouillet; Niccolo Castellani; Alain Persico; Valentina Meli; Simon Martin 006; Olivier Billoint; R. Segaud; Stefania Bernasconi; C. Pellissier; Carine Jahan; Christelle Charpin-Nicolle; P. Dezest; et al. (IMW, 2021)

Ge-Se-Sb-N-based OTS scaling perspectives for high-density 1 S1R crossbar arrays. - Joel Minguet Lopez; Niccolo Castellani; Laurent Grenouillet; Lucas Reganaz; Gabriele Navarro; Mathieu Bernard; Catherine Carabasse; Thomas Magis; Damien Deleruyelle; Marc Bocquet; Jean-Michel Portal; Etienne Nowak; et al. (IMW, 2021)

Elucidating 1S1R operation to reduce the read voltage margin variability by stack and programming conditions optimization. - Joel Minguet Lopez; Lucas Hudeley; Laurent Grenouillet; Diego Alfaro Robayo; Jury Sandrini; Gabriele Navarro; Mathieu Bernard; Catherine Carabasse; Damien Deleruyelle; Niccolo Castellani; Marc Bocquet; Jean-Michel Portal; et al. (IRPS, 2021)

Ferroelectric Tunneling Junctions for Edge Computing. - Erika Covi; Quang T. Duong; Suzanne Lancaster; Viktor Havel; Jean Coignus; Justine Barbot; Ole Richter; Philipp Klein; Elisabetta Chicca; Laurent Grenouillet; Athanasios Dimoulas; Thomas Mikolajick; et al. (ISCAS, 2021)

Interplay between charge trapping and polarization switching in MFDM stacks evidenced by frequency-dependent measurements. - Justine Barbot; Jean Coignus; Nicolas Vaxelaire; Catherine Carabasse; Olivier Glorieux; Messaoud Bedjaoui; François Aussenac; François Andrieu; François Triozon; Laurent Grenouillet (ESSCIRC, 2022)

Study of Nanosecond Laser Annealing on Silicon Doped Hafnium Oxide Film Crystallization and Capacitor Reliability. - Tarek Ali; Ricardo Olivo; S. Kerdilès; David Lehninger; Maximilian Lederer; Sourav De 002; A.-S. Royet; Ayse Sünbül; A. Prabhu; Kati Kühnel; Malte Czernohorsky; M. Rudolph; et al. (IMW, 2022)

1S1R sub-threshold operation in Crossbar arrays for low power BNN inference computing. - Joel Minguet Lopez; François Rummens; Lucas Reganaz; A. Heraud; Tifenn Hirtzlin; Laurent Grenouillet; Gabriele Navarro; Mathieu Bernard; Catherine Carabasse; Niccolo Castellani; Valentina Meli; S. Martin; et al. (IMW, 2022)

High temperature stability embedded ReRAM for 2x nm node and beyond. - Gabriel Molas; Giuseppe Piccolboni; Alessandro Bricalli; Anthonin Verdy; I. Naot; Y. Cohen; Amir Regev; I. Naveh; Damien Deleruyelle; Quentin Rafhay; Niccolo Castellani; Lucas Reganaz; et al. (IMW, 2022)

Memory Window in Si: HfO2 FeRAM arrays: Performance Improvement and Extrapolation at Advanced Nodes. - J. Laguerre; Marc Bocquet; Olivier Billoint; Simon Martin 006; Jean Coignus; Catherine Carabasse; Thomas Magis; T. Dewolf; François Andrieu; Laurent Grenouillet (IMW, 2023)

Demonstration of SMT-reflow Immune and SCA-resilient PUF on 28nm RRAM device array. - Vivek Parmar; Sandeep Kaur Kingra; Deepak Verma; Digamber Pandey; Giuseppe Piccolboni; Alessandro Bricalli; Amir Regev; Gabriel Pares; Laurent Grenouillet; Jean-François Nodin; Manan Suri (IMW, 2023)

Reliability assessment of hafnia-based ferroelectric devices and arrays for memory and AI applications (Invited). - Laurent Grenouillet; Justine Barbot; J. Laguerre; Simon Martin 006; Catherine Carabasse; M. Louro; Messaoud Bedjaoui; S. Minoret; S. Kerdilès; C. Boixaderas; Thomas Magis; Carine Jahan; et al. (IRPS, 2023)

1S1R Sub-Threshold Operation in Crossbar Arrays for Neural Networks Hardware Implementation. - Joel Minguet Lopez; Manon Dampfhoffer; Tifenn Hirtzlin; Lucas Reganaz; Laurent Grenouillet; Gabriele Navarro; Mathieu Bernard; Thomas Magis; Catherine Carabasse; Niccolo Castellani; Valentina Meli; Elisa Vianello; et al. (MIXDES, 2023)

Compute-In-Place Serial FeRAM: Enhancing Performance, Efficiency and Adaptability in Critical Embedded Systems. - Jean-Philippe Noël; Emanuele Valea; Laurent Grenouillet; B. Chapuis; Clément Fisher; A. Recoquillay; Bastien Giraud (VLSI-SoC, 2023)

DenRAM: Neuromorphic Dendritic Architecture with RRAM for Efficient Temporal Processing with Delays. - Simone D'Agostino; Filippo Moro; Tristan Torchet; Yigit Demirag; Laurent Grenouillet; Giacomo Indiveri; Elisa Vianello; Melika Payvand (CoRR, 2023)

Charge-based Sense Demonstration in 1T-1C HZO FeRAM Arrays to Overcome CBL-induced Bank Size Limitations. - Olivier Billoint; Simon Martin 006; J. Laguerre; L. Hosier; Jean Coignus; Catherine Carabasse; François Andrieu; Laurent Grenouillet (IMW, 2024)

Data Retention Insights from Joint Analysis on BEOL-Integrated HZO-Based Scaled FeCAPs and 16kbit 1T-1C FeRAM Arrays. - J. Laguerre; Simon Martin 006; Jean Coignus; Catherine Carabasse; Marc Bocquet; François Andrieu; Laurent Grenouillet (IRPS, 2024)

Polarization-Dependent Oxygen, Vacancy Distribution in Ferroelectric Hf0.5 Zr0.5 O2 Capacitors. - Gunjan Yadav; Lucía Pérez Ramírez; Nick Barrett; Jean Coignus; Nicolas Vaxelaire; Laurent Grenouillet; Jean Pascal Rueff; Denis Ceolin (NVMTS, 2024)

A Novel Design Technique for Enhanced Security and New Applications of Ferroelectric-Based Non-Volatile SRAM. - Lucas Rhetat; Jean-Philippe Noel; Bastien Giraud; Laurent Grenouillet; Julie Laguerre; Cédric Marchand 002; Ian O'Connor (VLSI-SoC, 2024)

Enhanced Ferroelectricity in Hf0.5Zr.5O2 Thin Films by NLA at Intermediate Laser Energy Density. - David Lehninger; Tianren Zhang; Peter Reinig; Justine Barbot; Mathieu Opprecht; Sébastien Kerdilès; Laurent Grenouillet; Konrad Seidel; Maximilian Lederer (ICICDT, 2025)

Dual-Mode 16kb Memory: Transforming a Ferroelectric Capacitor Bitcell into Resistive Filamentary Memory. - Tarcisius Januel; Olivier Billoint; Laurent Grenouillet; S. Martin; Jean-Michel Portal; Elisa Vianello (IMW, 2025)

Unified Memcapacitor-Memristor Memory for Synaptic Weights and Neuron Temporal Dynamics. - Simone D'Agostino; Marco Massarotto; Tristan Torchet; Filippo Moro; Niccolo Castellani; Laurent Grenouillet; Yann Beilliard; David Esseni; Melika Payvand; Elisa Vianello (CoRR, 2025)