Virtual-ground sensing techniques for a 49-ns/200-MHz access time 1.8-V 256-Mb 2-bit-per-cell flash memory. - Binh Quang Le; Michael Achter; Chin Ghee Chng; Xin Guo; Lee Cleveland; Pau-Ling Chen; Michael Van Buskirk; Robert W. Dutton (IEEE J. Solid State Circuits, 2004)

Flash storage integration in the IBM System z EC12 I/O drawer. - Edward W. Chencinski; Michael J. Anderson; Lee Cleveland; Jim Coon; David Craddock; R. E. Galbraith; Thomas A. Gregg; Thomas B. Mathias; D. F. Moertl; K. J. Oakes; M. Sabins; G. E. Sittmann; et al. (IBM J. Res. Dev., 2013)

NRAM status and prospects. - David C. Gilmer; Thomas Rueckes; Lee Cleveland; Darlene Viviani (ICICDT, 2017)

Memory update characteristics of carbon nanotube memristors (NRAM®) under circuitry-relevant operation conditions. - Dmitry Veksler; Gennadi Bersuker; Adam W. Bushmaker; Maribeth Mason; P. R. Shrestha; Kin P. Cheung; Jason P. Campbell; Thomas Rueckes; Lee Cleveland; Harry Luan; David C. Gilmer (IRPS, 2020)

Development of 16 Mb NRAM Aiming for High Reliability, Small Cell Area, and High Switching Speed. - Hitoshi Saito; Jun'ichi Watanabe; J. Seino; Tetsuro Tamura; Naoya Sashida; Kota Hara; Kuninori Kawabata; Atsushi Fujii; Jun Ohno; Atsushi Nakakubo; Manabu Kojima; T. Shimoyama; et al. (IMW, 2021)

Mitigating switching variability in carbon nanotube memristors. - James Farmer; William Whitehead; Andrew Hall; Dmitry Veksler; Gennadi Bersuker; David Z. Gao; Al-Moatasem El-Sayed; Thomas Durrant; Alexander L. Shluger; Thomas Rueckes; Lee Cleveland; Harry Luan; et al. (IRPS, 2021)

Combining measurements and modeling/simulations analysis to assess carbon nanotube memory cell characteristics. - James Farmer; Dmitry Veksler; E. Tang; Gennadi Bersuker; David Z. Gao; Al-Moatasem El-Sayed; Thomas Durrant; Alexander L. Shluger; Thomas Rueckes; Lee Cleveland; Harry Luan; Rahul Sen (IRPS, 2022)