Study of p-(6H, 4H, 3C)SiC/n-GaN Heterojunction SDR, DDR IMPATT Diodes. - Yang Dai; Yukun Li; Leiyu Gao; Jing Zuo; Cheng Chen; Zhongxu Wang; Wu Zhao (IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 2024)

Effect of Gate Structure on the Performances of Lateral AlGaN/GaN High-Electron-Mobility Avalanche-Transit-Time Transistor. - Yang Dai; Leiyu Gao; Yukun Li; Jing Zuo; Yue Zhang; Wu Zhao (IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 2025)