TCAD-SPICE simulation of MOSFET switch delay time for different CMOS technologies. - Konstantin O. Petrosyants; E. V. Orekhov; D. A. Popov; Igor A. Kharitonov; Lev M. Sambursky; A. P. Yatmanov; A. V. Voevodin; A. N. Mansurov (EWDTS, 2011)

Simulation of total dose influence on analog-digital SOI/SOS CMOS circuits with EKV-RAD macromodel. - Konstantin O. Petrosyants; Igor A. Kharitonov; Lev M. Sambursky; V. N. Bogatyrev; Z. M. Povarnitcyna; E. S. Drozdenko (EWDTS, 2013)

Fault simulation in radiation-hardened SOI CMOS VLSIs using universal compact MOSFET model. - Konstantin O. Petrosyants; Lev M. Sambursky; Igor A. Kharitonov; Boris G. Lvov (LATS, 2016)

Generalized test automation method for MOSFET's including characteristics measurements and model parameters extraction for aero-space applications. - Konstantin O. Petrosyants; Lev M. Sambursky; Igor A. Kharitonov; Mamed R. Ismail-Zade (EWDTS, 2017)

Radiation-Induced Fault Simulation of SOI/SOS CMOS LSI's Using Universal Rad-SPICE MOSFET Model. - Konstantin O. Petrosyants; Lev M. Sambursky; Igor A. Kharitonov; Boris G. Lvov (J. Electron. Test., 2017)

Electrical characterization and reliability of submicron SOI CMOS technology in the extended temperature range (to 300 °C). - Konstantin O. Petrosyants; Igor A. Kharitonov; Sergey V. Lebedev; Lev M. Sambursky; Sergey O. Safonov; Veniamin G. Stakhin (Microelectron. Reliab., 2017)

Prediction of High-Temperature Operation (up to +300°C) of Reference Voltage Source Built with Temperature-Tolerant Production Technology. - Lev M. Sambursky; Dmitry A. Parfenov; Mamed R. Ismail-Zade; Alexander S. Boldov; Borislav S. Dubyaga (EWDTS, 2018)

SPICE Compact BJT, MOSFET, and JFET Models for ICs Simulation in the Wide Temperature Range (From -200 °C to +300 °C). - Konstantin O. Petrosyants; Lev M. Sambursky; Maxim V. Kozhukhov; Mamed R. Ismail-Zade; Igor A. Kharitonov; Bo Li 051 (IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 2021)