Novel SenseFET structure for VDMOS with adopting body reverse bias technique to adjust the reference current ratio. - Tian Han; Fazhan Zhao; Xiaowu Cai; Liang Shan 015; Yun Tang; Bo Li 051 (Microelectron. J., 2023)

A Novel Reliability-Enhanced Dual Over-Temperature Protection Circuit With Delayed Thermal Restart for Power ICs. - Jianying Dang; Xiaowu Cai; Longli Pan; Liang Shan 015; Yu Lu; Yafei Xie; Xupeng Wang; Shiping Wang; Bo Li 051 (IEEE Trans. Circuits Syst. II Express Briefs, 2024)

A 600-V half-bridge gate drive circuit with high-speed and high-noise-immunity level shifter. - Xupeng Wang; Xiaowu Cai; Yu Lu; Jianying Dang; Longli Pan; Jian Lu; Liang Shan 015; Lei Wang; Bo Li 051 (Microelectron. J., 2025)