Liang Wang

Orcid: 0000-0002-0061-5502

Affiliations:
  • Beijing Microelectronics Technology Institute, China


According to our database1, Liang Wang authored at least 4 papers between 2007 and 2021.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

Legend:

Book 
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Article 
PhD thesis 
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Links

Online presence:

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Bibliography

2021
Radiation Hardened 12T SRAM With Crossbar-Based Peripheral Circuit in 28nm CMOS Technology.
IEEE Trans. Circuits Syst. I Regul. Pap., 2021

2020
A Robust Hardened Latch Featuring Tolerance to Double-Node-Upset in 28nm CMOS for Spaceborne Application.
IEEE Trans. Circuits Syst. II Express Briefs, 2020

2017
High energy proton and heavy ion induced single event transient in 65-nm CMOS technology.
Sci. China Inf. Sci., 2017

2007
An SEU-Tolerant Programmable Frequency Divider.
Proceedings of the 8th International Symposium on Quality of Electronic Design (ISQED 2007), 2007


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