Pre- and post-BD electrical conduction of stressed HfO2/SiO2 MOS gate stacks observed at the nanoscale. - Lidia Aguilera; Marc Porti; Montserrat Nafría; Xavier Aymerich (Microelectron. Reliab., 2005)

Nanometer-scale leakage measurements in high vacuum on de-processed high-k capacitors. - W. Polspoel; Wilfried Vandervorst; Lidia Aguilera; Marc Porti; Montserrat Nafría; Xavier Aymerich (Microelectron. Reliab., 2008)

Nanoscale and device level electrical behavior of annealed ALD Hf-based gate oxide stacks grown with different precursors. - Albin Bayerl; Mario Lanza; Lidia Aguilera; Marc Porti; Montserrat Nafría; Xavier Aymerich; Stefan De Gendt (Microelectron. Reliab., 2013)