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Process-induced charging damage in IGZO nTFTs. - Gaspard Hiblot; Nouredine Rassoul; Lieve Teugels; Katia Devriendt; Adrian Vaisman Chasin; Michiel J. van Setten; Attilio Belmonte; Romain Delhougne; Gouri Sankar Kar (IRPS, 2021)

Ultra-low Leakage IGZO-TFTs with Raised Source/Drain for Vt > 0 V and Ion > 30 µA/µm. - S. Subhechha; Nouredine Rassoul; Attilio Belmonte; Hubert Hody; Harold Dekkers; Michiel J. van Setten; Adrian Vaisman Chasin; Shamin H. Sharifi; S. Sutar; L. Magnarin; Umberto Celano; H. Puliyalil; et al. (VLSI Technology and Circuits, 2022)