Investigation of different screening methods on threshold voltage and gate oxide lifetime of SiC Power MOSFETs. - Limeng Shi; Shengnan Zhu; Jiashu Qian; Michael Jin; Monikuntala Bhattacharya; Marvin H. White; Anant K. Agarwal; Atsushi Shimbori; Tianshi Liu (IRPS, 2023)

Reliability Comparison of Commercial Planar and Trench 4H-SiC Power MOSFETs. - Shengnan Zhu; Limeng Shi; Michael Jin; Jiashu Qian; Monikuntala Bhattacharya; Hema Lata Rao Maddi; Marvin H. White; Anant K. Agarwal; Tianshi Liu; Atsushi Shimbori; Chingchi Chen (IRPS, 2023)

Investigation of the Electron Trapping in Commercial Thick Silicon Dioxides Thermally Grown on 4H-SiC under the Constant Current Stress. - Jiashu Qian; Limeng Shi; Michael Jin; Monikuntala Bhattacharya; Hengyu Yu; Marvin H. White; Anant K. Agarwal; Atsushi Shimbori; Tianshi Liu; Shengnan Zhu (IRPS, 2024)

Evaluation of Burn-in Technique on Gate Oxide Reliability in Commercial SiC MOSFETs. - Limeng Shi; Jiashu Qian; Michael Jin; Monikuntala Bhattacharya; Hengyu Yu; Marvin H. White; Anant K. Agarwal; Atsushi Shimbori (IRPS, 2024)

Investigation of Screening Methods for 1.2 kV 4H-SiC MOSFETs Using High Gate Voltage Pulses and Unclampled Inductive Switching. - Seung Yup Jang; Justin Lynch; Adam J. Morgan; Dinuth C. Y. B. Yapa Mudiyanselage; Woongje Sung; Limeng Shi; Anant K. Agarwal (IRPS, 2025)