Modeling and simulation development of electron beam resist based on cellular automata. - Ling Li 013; Shibing Long; Congshun Wang; Wengang Wu; Yilong Hao; Ming Liu 022 (Microelectron. J., 2006)

A Novel PbS/n-IGZO Thin-Film Nano-Photodetector with High Responsivity and High Photo-to-Dark Current Ratio. - Ying Meng; Jiawei Wang; Anjie Ming; Yinghui Wang; Xuewen Shi 002; Molin Li; Jing Zhang; Weibing Wang; Ling Li 013 (NEMS, 2018)

A Modeling Approach for 7nm Technology Node Area-Consuming Circuit Optimization and Beyond. - Qiang Huo; Zhenhua Wu; Feng Zhang 014; Ling Li 013 (SMACD, 2019)

A Novel General Compact Model Approach for 7nm Technology Node Circuit Optimization from Device Perspective and Beyond. - Qiang Huo; Zhenhua Wu; Weixing Huang; Xingsheng Wang; Geyu Tang; Jiaxin Yao; Yongpan Liu; Feng Zhang 014; Ling Li 013; Ming Liu 022 (CoRR, 2019)

A physical model for dual gate a-InGaZnO thin film transistors based on multiple trapping and release mechanism. - Linan Li; Wenqiang Ba; Wei Wang 209; Ling Li 013; Guangwei Xu; Lingfei Wang; Zhuoyu Ji; Congyan Lu; Writam Banerjee (Microelectron. J., 2019)

A Few-Step and Low-Cost Memristor Logic Based on MIG Logic for Frequent-Off Instant-On Circuits in IoT Applications. - Yiming Wang; Yun Li; Haihua Shen; Dongyu Fan; Wei Wang 003; Ling Li 013; Qi Liu 010; Feng Zhang 014; Xinghua Wang; Meng-Fan Chang; Ming Liu 022 (IEEE Trans. Circuits Syst. II Express Briefs, 2019)

Scaling Dual-Gate Ultra-thin a-IGZO FET to 30 nm Channel Length with Record-high Gm, max of 559 µS/µm at VDS=1 V, Record-low DIBL of 10 mV/V and Nearly Ideal SS of 63 mV/dec. - Kaifei Chen; Jiebin Niu; Guanhua Yang; Menggan Liu; Wendong Lu; Fuxi Liao; Kailiang Huang; Xinlv Duan; Congyan Lu; Jiawei Wang; Lingfei Wang; Mengmeng Li; et al. (VLSI Technology and Circuits, 2022)

Compact Modeling of IGZO-based CAA-FETs with Time-zero-instability and BTI Impact on Device and Capacitor-less DRAM Retention Reliability. - Jingrui Guo; Ying Sun; Lingfei Wang; Xinlv Duan; Kailiang Huang; Zhaogui Wang; Junxiao Feng; Qian Chen; Shijie Huang; Lihua Xu; Di Geng; Guangfan Jiao; et al. (VLSI Technology and Circuits, 2022)

Vertical Channel-All-Around (CAA) IGZO FET under 50 nm CD with High Read Current of 32.8 μA/μm (Vth + 1 V), Well-performed Thermal Stability up to 120 ℃ for Low Latency, High-density 2T0C 3D DRAM Application. - Kailiang Huang; Xinlv Duan; Junxiao Feng; Ying Sun; Congyan Lu; Chuanke Chen; Guangfan Jiao; Xinpeng Lin; Jinhai Shao; Shihui Yin; Jiazhen Sheng; Zhaogui Wang; et al. (VLSI Technology and Circuits, 2022)

First Demonstration of High-Sensitivity (NEP 1fW1/2) Back-Illuminated Active-Matrix Deep UV Image Sensor by Monolithic Integration of Ga2O3 Photodetectors and Oxide Thin-Film-Transistors. - Yuan Qin; Congyan Lu; Zhaoan Yu; Zhihong Yao; Feihong Wu; Danian Dong; Xiaolong Zhao; Guangwei Xu; Yuhao Zhang; Shibing Long; Ling Li 013; Ming Liu 022 (VLSI Technology and Circuits, 2022)

Optimization of Electrical Performance of aingaZnO Thin-Film Transistors by Interfacial Modification and Passivation. - Yanqin Zhang; Yifan Xie; Shuaidi Zhang; Lingfei Wang; Mengmeng Li; Ling Li 013 (ICTA, 2023)

First Demonstration of a Design Methodology for Highly Reliable Operation at High Temperature on 128kb 1T1C FeRAM Chip. - Tiancheng Gong; Lihua Xu; Wei Wei; Pengfei Jiang; Peng Yuan; Bowen Nie; Yuanquan Huang; Yuan Wang; Yang Yang; Jianfeng Gao 005; Junfeng Li; Jun Luo; et al. (VLSI Technology and Circuits, 2023)

IG-CRM: Area/Energy-Efficient IGZO-Based Circuits and Architecture Design for Reconfigurable CIM/CAM Applications. - Zeyu Guo 002; Jinshan Yue; Shengzhe Yan; Zhuoyu Dai; Xiangqu Fu; Zhaori Cong; Zening Niu; Ke Hu; Lihua Xu; Jiawei Wang; Lingfei Wang; Guanhua Yang; et al. (DAC, 2024)

First Demonstration of Monolithic Three-Dimensional Integration of Ultra-High Density Hybrid IGZO/Si SRAM and IGZO 2T0C DRAM Achieving Record-Low Latency (5000s). - Menggan Liu; Zhi Li 062; Wendong Lu; Kaifei Chen; Jiebin Niu; Fuxi Liao; Zijing Wu; Congyan Lu; Weizeng Li; Di Geng; Nianduan Lu; Chunmeng Dou; et al. (VLSI Technology and Circuits, 2024)

Ge-doped In2O3: First Demonstration of Utlizing Ge as Oxygen Vacancy Consumer to Break the Mobility/Reliability Tradeoff for High Performance Oxide TFTs. - Jiayi Wang; Ziheng Bai; Kuo Zhang; Zhicheng Wu; Di Geng; Yang Xu; Nannan You; Yuxuan Li; Guanhua Yang; Ling Li 013; Shengkai Wang; Ming Liu 022 (VLSI Technology and Circuits, 2024)

Binary-Stochasticity-Enabled Highly Efficient Neuromorphic Deep Learning Achieves Better-than-Software Accuracy. - Yang Li 203; Wei Wang 209; Ming Wang; Chunmeng Dou; Zhengyu Ma; Huihui Zhou; Peng Zhang 077; Nicola Lepri; Xumeng Zhang; Qing Luo; Xiaoxin Xu; Guanhua Yang; et al. (Adv. Intell. Syst., 2024)

A Multichiplet Computing-in-Memory Architecture Exploration Framework Based on Various CIM Devices. - Zhuoyu Dai; Feibin Xiang; Xiangqu Fu; Yifan He 003; Wenyu Sun; Yongpan Liu; Guanhua Yang; Feng Zhang 014; Jinshan Yue; Ling Li 013 (IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 2024)

A monolithic 3D IGZO-RRAM-SRAM-integrated architecture for robust and efficient compute-in-memory enabling equivalent-ideal device metrics. - Shengzhe Yan; Zhaori Cong; Zi Wang; Zhuoyu Dai; Zeyu Guo 002; Zhihang Qian; Xufan Li; Xu Zheng; Chuanke Chen; Nianduan Lu; Chunmeng Dou; Guanhua Yang; et al. (Sci. China Inf. Sci., 2025)

Etching process prediction based on cascade recurrent neural network. - Zhenjie Yao; Ziyi Hu; Panpan Lai; Fengling Qin; Wenrui Wang; Zhicheng Wu; Lingfei Wang; Hua Shao; Yongfu Li; Zhiqiang Li; Zhongming Liu; Junjie Li; et al. (Eng. Appl. Artif. Intell., 2025)