Threshold voltage shift and interface/border trapping mechanism in Al2O3/AlGaN/GaN MOS-HEMTs. - Jiejie Zhu; Bin Hou; Lixiang Chen; Qing Zhu; Ling Yang 003; Xiaowei Zhou; Peng Zhang; Xiaohua Ma 001; Yue Hao 001 (IRPS, 2018)

Investigation of Inverse Piezoelectric Effect and Trap Effect in AlGaN/GaN HEMTs Under Reverse-Bias Step Stress at Cryogenic Temperature. - Qing Zhu; Xiaohua Ma 001; Bin Hou; Mei Wu; Jiejie Zhu; Ling Yang 003; Meng Zhang; Yue Hao 001 (IEEE Access, 2020)

Novel Selective Area Recessed Regrowth-free Ohmic Contacts to High Al-content Barrier. - Hao Lu 012; Xiaohua Ma 001; Bin Hou; Ling Yang 003; Teng Huo; Zeyan Si; Yue Hao 001 (ICTA, 2021)

Recent progress of integrated circuits and optoelectronic chips. - Yue Hao 001; Shuiying Xiang; Genquan Han; Jincheng Zhang; Xiaohua Ma 001; Zhangming Zhu; Xingxing Guo; Yahui Zhang; Yanan Han; Ziwei Song; Yan Liu; Ling Yang 003; et al. (Sci. China Inf. Sci., 2021)

First Demonstration of High PAE Performance Using InGaN Channel HEMT for 5G RF Applications. - Hao Lu 012; Likun Zhou; Longge Deng; Ling Yang 003; Bin Hou; Xiaohua Ma 001; Yue Hao 001 (ICTA, 2022)

Improved transport properties and mechanism in recessed-gate InAlN/GaN HEMTs using a self-limited surface restoration method. - Siyu Liu; Xiaohua Ma 001; Jiejie Zhu; Minhan Mi; Jingshu Guo; Jielong Liu; Yilin Chen; Qing Zhu; Ling Yang 003; Yue Hao 001 (Sci. China Inf. Sci., 2022)

A Broadband Amplifier With Flat Bandwidth for Modulator and Measurement Driver Circuits. - Yuchen Wang; Xiaohua Ma 001; Yang Lu; Bochao Zhao; Ziyue Zhao; Chupeng Yi; Ling Yang 003; Jiangyi Shi; Yue Hao 001 (IEEE Trans. Instrum. Meas., 2022)

High-voltage quasi-vertical GaN-on-Si Schottky barrier diode with edge termination structure of optimized multi-level N ion implantation. - Qingyuan Chang; Bin Hou; Ling Yang 003; Mei Wu; Meng Zhang; Hao Lu 012; Fuchun Jia; Xuerui Niu; Chunzhou Shi; Jiale Du; Mao Jia; Qian Yu; et al. (Sci. China Inf. Sci., 2024)

Improved RF power performance via electrostatic shielding effect using AlGaN/GaN/graded-AlGaN/GaN double-channel structure. - Chunzhou Shi; Ling Yang 003; Meng Zhang; Hao Lu 012; Mei Wu; Bin Hou; Xuerui Niu; Qian Yu; Wenliang Liu 003; Wenze Gao; Xiaohua Ma 001; Yue Hao 001 (Sci. China Inf. Sci., 2024)

Realtime observation of "spring fracture" like AlGaN/GaN HEMT failure under bias. - Qing Zhu; Zhenni Wang; Yuxiang Wei 006; Ling Yang 003; Xiaoli Lu; Jiejie Zhu; Peng Zhong; Yimin Lei; Xiaohua Ma 001 (Sci. China Inf. Sci., 2024)

Gate conduction mechanisms and high Vth stability of Cu-gated p-GaN HEMT. - Mao Jia; Bin Hou; Ling Yang 003; Meng Zhang; Mei Wu; Hao Lu 012; Xitong Hong; Zhiqiang Xue; Jiale Du; Qingyuan Chang; Qian Xiao; Xiaohua Ma 001; et al. (Sci. China Inf. Sci., 2025)