A 0.021mm2 PVT-Aware Digital-Flow-Compatible Adaptive Back-Biasing Regulator with Scalable Drivers Achieving 450% Frequency Boosting and 30% Power Reduction in 22nm FDSOI Technology. - Yasser Moursy; Thiago Raupp da Rosa; Lionel Jure; Anthony Quelen; Sébastien Genevey; Lionel Pierrefeu; Emmanuel G. Collins Jr.; Joerg Winkler; Jonathan Park; Gaël Pillonnet; Vincent Huard; Andrea Bonzo; et al. (ISSCC, 2021)

Runtime Test Solution for Adaptive Aging Compensation and Fail Operational Safety mode. - Vincent Huard; Francois Jacquet; Souhir Mhira; Lionel Jure; Olivier Montfort; Mathieu Louvat; L. Zaia; F. Bertrand; E. Acacia; O. Caffin; H. Belhadj; O. Durand; et al. (IRPS, 2022)

Radiation Hardness Evaluations of a Stacked Flip Flop in a 22 nm FD-SOI Process by Heavy-Ion Irradiation. - Shotaro Sugitani; Ryuichi Nakajima; Takafumi Ito; Jun Furuta; Kazutoshi Kobayashi; Mathieu Louvat; Francois Jacquet; Jean-Christophe Eloy; Olivier Montfort; Lionel Jure; Vincent Huard (IOLTS, 2023)

A 12.4TOPS/W @ 136GOPS AI-IoT System-on-Chip with 16 RISC-V, 2-to-8b Precision-Scalable DNN Acceleration and 30%-Boost Adaptive Body Biasing. - Francesco Conti 001; Davide Rossi; Gianna Paulin; Angelo Garofalo; Alfio Di Mauro; Georg Rutishauser; Gianmarco Ottavi; Manuel Eggimann; Hayate Okuhara; Vincent Huard; Olivier Montfort; Lionel Jure; et al. (ISSCC, 2023)

Soft-Error Tolerance by Guard-Gate Structures on Flip-Flops in 22 and 65 nm FD-SOI Technologies. - Ryuichi Nakajima; Takafumi Ito; Shotaro Sugitani; Tomoya Kii; Mitsunori Ebara; Jun Furuta; Kazutoshi Kobayashi; Mathieu Louvat; Francois Jacquet; Jean-Christophe Eloy; Olivier Montfort; Lionel Jure; et al. (IEICE Trans. Electron., 2024)