Reduction of UHF power transistor distortion with a nonuniform collector doping profile. - Wibo D. van Noort; Leo C. N. de Vreede; H. F. F. Jos; Lis K. Nanver; Jan W. Slotboom (IEEE J. Solid State Circuits, 2001)

Power amplifier PAE and ruggedness optimization by second-harmonic control. - Marco Spirito; Leo C. N. de Vreede; Lis K. Nanver; Stephan Weber; Joachim N. Burghartz (IEEE J. Solid State Circuits, 2003)

Extraction and modeling of self-heating and mutual thermal coupling impedance of bipolar transistors. - Nebojsa Nenadovic; Slobodan Mijalkovic; Lis K. Nanver; Lode K. J. Vandamme; Vincenzo d'Alessandro; Hugo Schellevis; Jan W. Slotboom (IEEE J. Solid State Circuits, 2004)

Electrothermal characterization of silicon-on-glass VDMOSFETs. - Nebojsa Nenadovic; V. Cuoco; S. J. C. H. Theeuwen; Lis K. Nanver; Hugo Schellevis; G. Spierings; H. F. F. Jos; J. W. Slotboom (Microelectron. Reliab., 2005)

Adaptive Multi-Band Multi-Mode Power Amplifier Using Integrated Varactor-Based Tunable Matching Networks. - W. C. Edmund Neo; Yu Lin; Xiaodong Liu; Leo C. N. de Vreede; Lawrence E. Larson; Marco Spirito; Marco J. Pelk; Koen Buisman; Atef Akhnoukh; Anton de Graauw; Lis K. Nanver (IEEE J. Solid State Circuits, 2006)

Improved RF Devices for Future Adaptive Wireless Systems Using Two-Sided Contacting and AlN Cooling. - Lis K. Nanver; Hugo Schellevis; Tom L. M. Scholtes; Luigi La Spina; Gianpaolo Lorito; Francesco Sarubbi; Viktor Gonda; Milos Popadic; Koen Buisman; Leo C. N. de Vreede; Cong Huang; Silvana Milosavljevic; et al. (IEEE J. Solid State Circuits, 2009)

Optimization of the perimeter doping of ultrashallow p+-n--n+ photodiodes. - Tihomir Knezevic; Tomislav Suligoj; Agata Sakic; Lis K. Nanver (MIPRO, 2011)

Epitaxial growth of large-area p+n diodes at 400 ºC by Aluminum-Induced Crystallization. - Agata Sakic; Lin Qi; Tom L. M. Scholtes; Johan van der Cingel; Lis K. Nanver (ESSDERC, 2012)

Electrical performance stability characterization of high-sensitivity Si-based EUV photodiodes in a harsh industrial application. - Lei Shi; Stoyan N. Nihtianov; Frank Scholze 002; Lis K. Nanver (IECON, 2012)

Modelling of electrical characteristics of ultrashallow pure amorphous boron p+n junctions. - Tihomir Knezevic; Tomislav Suligoj; Agata Sakic; Lis K. Nanver (MIPRO, 2012)

Electrical and Optical Performance Investigation of Si-Based Ultrashallow-Junction p+-n VUV/EUV Photodiodes. - Lei Shi; Stoyan N. Nihtianov; Sha Xia; Lis K. Nanver; Alexander Gottwald; Frank Scholze 002 (IEEE Trans. Instrum. Meas., 2012)

High-ohmic resistors using nanometer-thin pure-boron chemical-vapour-deposited layers. - Negin Golshani; Vahid Mohammadi; Siva Ramesh; Lis K. Nanver (ESSDERC, 2013)

Role of junction depth in light emission from silicon p-i-n leds. - Giulia Piccolo; Amir Sammak; Raymond J. E. Hueting; Jurriaan Schmitz; Lis K. Nanver (ESSDERC, 2013)

Random Telegraph Signal phenomena in avalanche mode diodes: Application to SPADs. - Vishal Agarwal; Anne-Johan Annema; Satadal Dutta; Raymond J. E. Hueting; Lis K. Nanver; Bram Nauta (ESSDERC, 2016)

Perimeter effects from interfaces in ultra-thin layers deposited on nanometer-deep p+n silicon junctions. - Tihomir Knezevic; Lis K. Nanver; Tomislav Suligoj (MIPRO, 2017)

Non-linear behavior of Al-contacted pure amorphous boron (PureB) devices at low temperatures. - Tihomir Knezevic; Lis K. Nanver; Ivana Capan; Tomislav Suligoj (MIPRO, 2018)

An experimental view on PureB silicon photodiode device physics. - Lis K. Nanver (MIPRO, 2018)

Back-end-of-line CMOS-compatible diode fabrication with pure boron deposition down to 50 °C. - Tihomir Knezevic; Tomislav Suligoj; Xingyu Liu; Lis K. Nanver; Ahmed Elsayed; Jan F. Dick; Jörg Schulze (ESSDERC, 2019)

Impact of ultra-thin-layer material parameters on the suppression of carrier injection in rectifying junctions formed by interfacial charge layers. - Tihomir Knezevic; Tomislav Suligoj; Lis K. Nanver (MIPRO, 2019)

Reverse breakdown and light-emission patterns studied in Si PureB SPADs. - Max Krakers; T. Kneevic; Lis K. Nanver (MIPRO, 2019)

Modeling and Simulation Study of Electrical Properties of Ge-on-Si Diodes with Nanometer-thin PureGaB Layer. - Lovro Markovic; Tihomir Knezevic; Lis K. Nanver; Tomislav Suligoj (MIPRO, 2021)

Impact of the collector structure on the performance of the insulated gate bipolar transistor. - Jeroen van Zoeren; Gaurav Gupta; Boni K. Boksteen; Lis K. Nanver; Raymond J. E. Hueting (Microelectron. J., 2025)