Lg = 40nm Composite Channel MOS-HEMT Exhibiting fτ = 420 GHz, fmax = 562 GHz. - Brian Markman; Simone Tommaso Suran Brunelli; Matthew Guidry; Logan Whitaker; Mark J. W. Rodwell (DRC, 2021)

Transistors for 100-300GHz Wireless. - Mark J. W. Rodwell; Brian Markman; Yihao Fang; Logan Whitaker; Hsin-Ying Tseng; Ahmed S. H. Ahmed (ESSDERC, 2021)

Self-Aligned InGaAs Channel MOS-HEMTs for High Frequency Applications. - Logan Whitaker; Brian Markman; Mark J. W. Rodwell (DRC, 2023)

Planar 200-GHz Transceiver Modules. - Amirreza Alizadeh; Utku Soylu; Logan Whitaker; Biljana Stamenic; Demis D. John; Munkyo Seo; Ahmed S. H. Ahmed; Mark J. W. Rodwell (IEEE J. Solid State Circuits, 2025)