Comparative Study on the Energy Profile of NBTI-Related Defects in Si and Ferroelectric p-FinFETs. - Longda Zhou; Qingzhu Zhang; Hong Yang; Zhigang Ji; Zhaohao Zhang; Renren Xu; Huaxiang Yin; Wenwu Wang 006 (IRPS, 2020)

Comparative Study on the Energy Distribution of Defects under HCD and NBTI in Short Channel p-FinFETs. - Hao Chang; Longda Zhou; Hong Yang; Zhigang Ji; Qianqian Liu; Eddy Simoen; Huaxiang Yin; Wenwu Wang 006 (IRPS, 2021)

A Fast DCIV Technique for Characterizing the Generation and Repassivation of Interface Traps Under DC/ AC NBTI Stress/Recovery Condition in Si p-FinFETs. - Longda Zhou; Zhaohao Zhang; Hong Yang; Zhigang Ji; Qianqian Liu; Qingzhu Zhang; Eddy Simoen; Huaxiang Yin; Jun Luo; Anyan Du; Chao Zhao; Wenwu Wang 006 (IRPS, 2021)

New Insight into the Aging Induced Retention Time Degraded of Advanced DRAM Technology. - Yong Liu; Pengpeng Ren; Da Wang; Longda Zhou; Zhigang Ji; Junhua Liu; Runsheng Wang; Ru Huang 001 (IRPS, 2022)

Characterization and Modelling of Hot Carrier Degradation in pFETs under Vd>Vg Condition for sub-20nm DRAM Technologies. - Da Wang; Yong Liu; Pengpeng Ren; Longda Zhou; Zhigang Ji; Junhua Liu; Runsheng Wang; Ru Huang 001 (IRPS, 2022)

Double-sided Row Hammer Effect in Sub-20 nm DRAM: Physical Mechanism, Key Features and Mitigation. - Longda Zhou; Jie Li; Zheng Qiao; Pengpeng Ren; Zixuan Sun; Jianping Wang; Blacksmith Wu; Zhigang Ji; Runsheng Wang; Kanyu Cao; Ru Huang 001 (IRPS, 2023)

Convolution-Based Vth Shift Prediction and the New 9T2C Pixel Circuit in LTPS TFT AMOLED. - Shiyu Xia; Longda Zhou; Kewei Wang 008; Xiaobin Fan; Yongkang Xue; Qi Shan; Hannian Wang; Pengpeng Ren; Zhigang Ji; Ru Huang 001 (IRPS, 2024)

Understanding the Physical Mechanism of RowPress at the Device-Level in Sub-20 nm DRAM. - Longda Zhou; Jie Li; Pengpeng Ren; Sheng Ye; Da Wang; Zheng Qiao; Zhigang Ji (IRPS, 2024)