Compact electro-thermal modeling of a SiC MOSFET power module under short-circuit conditions. - Lorenzo Ceccarelli; Paula Diaz Reigosa; Amir Sajjad Bahman; Francesco Iannuzzo; Frede Blaabjerg (IECON, 2017)

A survey of SiC power MOSFETs short-circuit robustness and failure mode analysis. - Lorenzo Ceccarelli; Paula Diaz Reigosa; Francesco Iannuzzo; Frede Blaabjerg (Microelectron. Reliab., 2017)

An Improved Physics-based LTSpice Compact Electro-Thermal Model for a SiC Power MOSFET with Experimental Validation. - Md Maksudul Hossain; Lorenzo Ceccarelli; Arman Ur Rashid; Ramchandra M. Kotecha; H. Alan Mantooth (IECON, 2018)

Investigating SiC MOSFET body diode's light emission as temperature-sensitive electrical parameter. - Lorenzo Ceccarelli; Haoze Luo; Francesco Iannuzzo (Microelectron. Reliab., 2018)

Investigation on the degradation indicators of short-circuit tests in 1.2 kV SiC MOSFET power modules. - H. Du; Paula Diaz Reigosa; Francesco Iannuzzo; Lorenzo Ceccarelli (Microelectron. Reliab., 2018)

Effect of short-circuit stress on the degradation of the SiO2 dielectric in SiC power MOSFETs. - Paula Diaz Reigosa; Francesco Iannuzzo; Lorenzo Ceccarelli (Microelectron. Reliab., 2018)