Layer disordering and aluminum-gallium interchange in aluminum-gallium arsenide - gallium-arsenide quantum well heterostructures - Louis Guido (1989)

Vertical GaN-on-GaN p-n Diodes with 10-A Forward Current and 1.6 kV Breakdown Voltage. - Jingshan Wang; Lina Cao; Jinqiao Xie; Edward Beam; Chris Youtsey; Robert McCarthy; Louis Guido; Patrick Fay (DRC, 2018)