A Method to Caculate Redundancy Coverage for FLASH Memory. - Stella Matarrese; Luca Fasoli (MTDT, 2001)

512-Mb PROM with a three-dimensional array of diode/antifuse memory cells. - Mark Johnson; Ali Al-Shamma; Derek Bosch; Matthew Crowley; Michael Farmwald; Luca Fasoli; Alper Ilkbahar; Bendik Kleveland; Thomas H. Lee; Tz-Yi Liu; Quang Nguyen; Roy Scheuerlein; et al. (IEEE J. Solid State Circuits, 2003)

A 130.7mm2 2-layer 32Gb ReRAM memory device in 24nm technology. - Tz-Yi Liu; Tian Hong Yan; Roy Scheuerlein; Yingchang Chen; Jeffrey KoonYee Lee; Gopinath Balakrishnan; Gordon Yee; Henry Zhang; Alex Yap; Jingwen Ouyang; Takahiko Sasaki; Sravanti Addepalli; et al. (ISSCC, 2013)

A 130.7-mm2 2-Layer 32-Gb ReRAM Memory Device in 24-nm Technology. - Tz-Yi Liu; Tian Hong Yan; Roy Scheuerlein; Yingchang Chen; Jeffrey KoonYee Lee; Gopinath Balakrishnan; Gordon Yee; Henry Zhang; Alex Yap; Jingwen Ouyang; Takahiko Sasaki; Ali Al-Shamma; et al. (IEEE J. Solid State Circuits, 2014)