High Ion/Ioff ratio BJT selector for 32 cell string Resistive RAM arrays. - Andrea Redaelli; Luca Laurin; Simone Lavizzari; Carmela Cupeta; Giorgio Servalli; Augusto Benvenuti (ESSDERC, 2014)

Characterization of reset state through energy activation study in Ge-GST based ePCM. - Matteo Baldo; Lorenzo Turconi; Alessandro Motta; Elisa Petroni; Luca Laurin; Daniele Ielmini; Andrea Redaelli (ESSDERC, 2022)

Modeling Environment for Ge-rich GST Phase Change Memory Cells. - Matteo Baldo; Luca Laurin; Elisa Petroni; Giulia Samanni; M. Allegra; Enrico Gomiero; Daniele Ielmini; Andrea Redaelli (IMW, 2022)

Interaction between forming pulse and integration process flow in ePCM. - Matteo Baldo; Elisa Petroni; Luca Laurin; Giulia Samanni; Octavian Melinc; Daniele Ielmini; Andrea Redaelli (PRIME, 2022)

Unveiling Retention Physical Mechanism of Ge-rich GST ePCM Technology. - Luca Laurin; Matteo Baldo; Elisa Petroni; Giulia Samanni; Lorenzo Turconi; A. Motta; Massimo Borghi; A. Serafini; D. Codegoni; M. Scuderi; S. Ran; A. Claverie; et al. (IRPS, 2023)