A new test methodology for an exhaustive study of single-event-effects on power MOSFETs. - Giovanni Busatto; D. Bisello; Giuseppe Currò; Piero Giubilato; Francesco Iannuzzo; S. Mattiazzo; D. Pantano; Annunziata Sanseverino; Luca Silvestrin; M. Tessaro; Francesco Velardi; Jeffery Wyss (Microelectron. Reliab., 2011)

Experimental study of Single Event Effects induced by heavy ion irradiation in enhancement mode GaN power HEMT. - Carmine Abbate; Giovanni Busatto; Francesco Iannuzzo; S. Mattiazzo; Annunziata Sanseverino; Luca Silvestrin; D. Tedesco; Francesco Velardi (Microelectron. Reliab., 2015)

Progressive drain damage in SiC power MOSFETs exposed to ionizing radiation. - Carmine Abbate; Giovanni Busatto; S. Mattiazzo; Annunziata Sanseverino; Luca Silvestrin; D. Tedesco; Francesco Velardi (Microelectron. Reliab., 2018)

On the Vulnerability of UMOSFETs in Terrestrial Radiation Environments. - Saulo G. Alberton; Alexis C. Vilas Bôas; Jeffery Wyss; Vitor A. P. Aguiar; Matheus S. Pereira; Luca Silvestrin; Serena Mattiazzo; Alessandro Paccagnella; Carlo Cazzaniga; Maria Kastriotou; Christopher D. Frost; Nilberto H. Medina (IEEE Access, 2025)