Novel Material, Process and Device Innovations for Next Generation Silicon Carbide (SiC) Trench MOSFET Technology. - Pratik B. Vyas; Ludovico Megalini; Ashish Pal; Joshua Holt; Archana Kumar; Stephen Weeks; Charisse Zhao; Lucien Date; Hansel Lo; Michel Khoury; Safdar Muhammad; Fabian Piallat; et al. (VLSI Technology and Circuits, 2024)

A Novel D2 Plasma Treatment for Defect Passivation: From Modeling to Process Optimization. - Sara Vecchi; Vikram Bhosle; Andrea Palmieri; Davide Cornigli; Fabrizio Buscemi; Andrea Padovani; Deven Raj; Andrew Cockburn; Lucien Date; Gaurav Thareja; Federico Nardi; Luca Larcher (IRPS, 2025)