Potential remedies for the VT/Vfb-shift problem of Hf/polysilicon-based gate stacks: a solution-based survey. - W. Deweerd; Vidya Kaushik; J. Chen; Y. Shimamoto; Tom Schram; L.-Å. Ragnarsson; Annelies Delabie; Luigi Pantisano; B. Eyckens; J. W. Maes (Microelectron. Reliab., 2005)

On the data interpretation of the C-AFM measurements in the characterization of thin insulating layers. - J. Pétry; Wilfried Vandervorst; Luigi Pantisano; Robin Degraeve (Microelectron. Reliab., 2005)

Reliability screening of high-k dielectrics based on voltage ramp stress. - A. Kerber; Luigi Pantisano; Anabela Veloso; Guido Groeseneken; Martin Kerber (Microelectron. Reliab., 2007)

Mechanism of O2-anneal induced Vfb shifts of Ru gated stacks. - Z. Li; Tom Schram; Luigi Pantisano; A. Stesmans; Thierry Conard; S. Shamuilia; V. V. Afanasiev; A. Akheyar; Sven Van Elshocht; D. P. Brunco; W. Deweerd; Y. Naoki; et al. (Microelectron. Reliab., 2007)

Low-frequency noise assessment of the transport mechanisms in SiGe channel bulk FinFETs. - Tommaso Romeo; Luigi Pantisano; Eddy Simoen; Raymond Krom; Mitsuhiro Togo; N. Horiguchi; Jérôme Mitard; Aaron Thean; Guido Groeseneken; Cor Claeys; Felice Crupi (ESSDERC, 2012)

High Performance and Yield for Super Steep Retrograde Wells (SSRW) by Well Implant / Si-based Epitaxy on Advanced Technology FinFETs. - U. Rana; D. P. Brunco; S. Raman; Dina H. Triyoso; M. W. Stoker; Jeffrey B. Johnson; Luigi Pantisano; K. D. Seo; M. Zhao; A. Reznicek; R. Krishnan; B. Moser; et al. (DRC, 2019)

Microprocessor Switching Activity Translation to AC Gate Oxide Wearout: Does it Matter? INTEL4 Meteor Lake Chip Activity Case Study. - Luigi Pantisano; K. Joshi; Z. Chbili; E. Frantz; S. M. Ramey; J. Hicks; H. Le; K. M. Foley; K. Pasumarthi; J. Sebot (IRPS, 2025)