Anti-ferroelectric ZrO2, an enabler for low power non-volatile 1T-1C and 1T random access memories. - Milan Pesic; Michael Hoffmann 008; Claudia Richter; Stefan Slesazeck; Thomas Kämpfe; Lukas M. Eng; Thomas Mikolajick; Uwe Schroeder (ESSDERC, 2017)

Designing a Robust Kelvin Probe Setup Optimized for Long-Term Surface Photovoltage Acquisition. - Elke Beyreuther; Stefan Grafström; Lukas M. Eng (Sensors, 2018)

Impact of Ferroelectric Wakeup on Reliability of Laminate based Si-doped Hafnium Oxide (HSO) FeFET Memory Cells. - Tarek Ali; Kati Kühnel; Malte Czernohorsky; Matthias Rudolph; Björn Pätzold; Ricardo Olivo; David Lehninger; Konstantin Mertens; Franz Müller 001; Maximilian Lederer; Raik Hoffmann; Clemens Mart; et al. (IRPS, 2020)

Endurance improvements and defect characterization in ferroelectric FETs through interface fluorination. - Yannick Raffel; Ricardo Olivo; Maximilian Lederer; Franz Müller 001; Raik Hoffmann; Tarek Ali; Konstantin Mertens; Luca Pirro; Maximilian Drescher; Sven Beyer; Thomas Kämpfe; Konrad Seidel; et al. (IMW, 2022)

Impact of Temperature on Reliability of MFIS HZO-based Ferroelectric Tunnel Junctions. - Ayse Sünbül; Tarek Ali; Raik Hoffmann; Ricardo Revello; Yannick Raffel; Pardeep Duhan; David Lehninger; Kati Kühnel; Matthias Rudolph; Sebastian Oehler; Philipp Schramm; Malte Czernohorsky; et al. (IRPS, 2022)

Improved Endurance Reliability of Ferroelectric Hafnium Oxide-Based BEoL Integrated MFM Capacitors. - Ayse Sünbül; David Lehninger; Raik Hoffmann; Hannes Mähne; Kerstin Bernert; Steffen Thiem; Thomas Kämpfe; Konrad Siedel; Maximilian Lederer; Lukas M. Eng (IRPS, 2024)