Systematic Study on Positive Bias Temperature Instability(PBTI) of ZrO2-based Ge nMOSFETs with Interlayer Passivations. - Lulu Chou; Xiao Yu; Huan Liu; Yan Liu; Genquan Han; Yue Hao 001 (ICICDT, 2022)

Mobile-ionic FETs with ultra-scaled amorphous dielectric achieving ferroelectric behaviors and sub-kT/q swing with temperature down to 77 K. - Huan Liu; Qiyu Yang; Chengji Jin; Jiajia Chen; Lulu Chou; Xiao Yu; Yan Liu; Genquan Han (Sci. China Inf. Sci., 2024)