The influence of 1 nm AlN interlayer on properties of the Al0.3Ga0.7N/AlN/GaN HEMT structure. - Lunchun Guo; Xiaoliang Wang; Cuimei Wang; Hongling Xiao; Junxue Ran; Weijun Luo; Xiaoyan Wang; Baozhu Wang; Cebao Fang; Guoxin Hu (Microelectron. J., 2008)

Influence of AlN buffer layer thickness on the properties of GaN epilayer on Si(1 1 1) by MOCVD. - Weijun Luo; Xiaoliang Wang; Lunchun Guo; Hongling Xiao; Cuimei Wang; Junxue Ran; Jianping Li; Jinmin Li (Microelectron. J., 2008)

Growth and fabrication of AlGaN/GaN HEMT based on Si(1 1 1) substrates by MOCVD. - Weijun Luo; Xiaoliang Wang; Hongling Xiao; Cuimei Wang; Junxue Ran; Lunchun Guo; Jianping Li; Hongxin Liu; Yanling Chen; Fuhua Yang; Jinmin Li (Microelectron. J., 2008)