A homogeneous and reproducible large-area, low dispersion GaN-on-Si normally-off 600 V transistor technology using selective GaN etching. - Patrick Waltereit; Marina Preschle; Stefan Müller; Lutz Kirste; Heiko Czap; Joachim Ruster; Michael Dammann; Richard Reiner (DRC, 2018)

Cathodoluminescence spectroscopy for failure analysis and process development of GaN-based microelectronic devices. - C. Monachon; Marcin Stefan Zielinski; J. Berney; D. Poppitz; Andreas Graff; Steffen Breuer; Lutz Kirste (IRPS, 2018)

Impact of Surface Chemistry and Doping Concentrations on Biofunctionalization of GaN/Ga‒In‒N Quantum Wells. - Nilanjon Naskar; Martin F. Schneidereit; Florian Huber; Sabyasachi Chakrabortty; Lothar Veith; Markus Mezger; Lutz Kirste; Theo Fuchs; Thomas Diemant; Tanja Weil; R. Jürgen Behm; Klaus Thonke; et al. (Sensors, 2020)