Record High Active Boron Doping using Low Temperature In-situ CVD: Enabling Sub-5×10-10 Ω-cm2 ρc from Cryogenic (5 K) to Room Temperature. - Gerui Zheng; Yuxuan Wang; Haiwen Xu; Rami Khazaka; Lutz Muehlenbein; Sheng Luo; Xuanqi Chen; Rui Shao; Zijie Zheng; Gengchiau Liang; Xiao Gong (VLSI Technology and Circuits, 2023)