Accurate lifetime prediction for channel hot carrier stress on sub-1 nm equivalent oxide thickness HK/MG nMOSFET with thin titanium nitride capping layer. - Weichun Luo; Hong Yang; Wenwu Wang 006; Yefeng Xu; Bo Tang; Shangqing Ren; Hao Xu; Yanrong Wang; Luwei Qi; Jiang Yan; Huilong Zhu; Chao Zhao; et al. (Microelectron. Reliab., 2016)

A Novel Nonlinear Control Technique With Its Application to Magnetic Levitated Systems. - Luwei Qi; Jian-Ping Cai 001; Antai Han; Jun Wan 003; Congli Mei; Yunxia Luo (IEEE Access, 2018)

Influence of an ALD TiN capping layer on the PBTI characteristics of n-FinFET with ALD HfO2/TiN-capping/TiAl gate stacks. - Hong Yang; Luwei Qi; Yanbo Zhang; Bo Tang; Qianqian Liu; Hao Xu; Xueli Ma; Xiaolei Wang; Yongliang Li; Huaxiang Yin; Junfeng Li; Huilong Zhu; et al. (Sci. China Inf. Sci., 2020)