A 50nm 8Gb NAND Flash Memory with 100MB/s Program Throughput and 200MB/s DDR Interface. - Dean Nobunaga; Ebrahim Abedifard; Frankie Roohparvar; June Lee; Erwin Yu; Allahyar Vahidimowlavi; Michael Abraham; Sanjay Talreja; Rajesh Sundaram; Rod Rozman; Luyen Vu; Chih-Liang Chen; et al. (ISSCC, 2008)

19.1 A 128Gb MLC NAND-Flash device using 16nm planar cell. - Mark Helm; Jae-Kwan Park; Ali Ghalam; Jason Guo; Chang-Wan Ha; Cairong Hu; Heonwook Kim; Kalyan Kavalipurapu; Eric Lee; Ali Mohammadzadeh; Dan Nguyen; Vipul Patel; et al. (ISSCC, 2014)

7.7 A 768Gb 3b/cell 3D-floating-gate NAND flash memory. - Tomoharu Tanaka; Mark Helm; Tommaso Vali; Ramin Ghodsi; Koichi Kawai; Jae-Kwan Park; Shigekazu Yamada; Feng Pan; Yuichi Einaga; Ali Ghalam; Toru Tanzawa; Jason Guo; et al. (ISSCC, 2016)

A 1-Tb Density 4b/Cell 3D-NAND Flash on 176-Tier Technology with 4-Independent Planes for Read using CMOS-Under-the-Array. - Ted Pekny; Luyen Vu; Jeff Tsai 002; Dheeraj Srinivasan; Erwin Yu; Jonathan Pabustan; Joe Xu; Srinivas Deshmukh; Kim-Fung Chan; Michael Piccardi; Kevin Xu; Guan Wang; et al. (ISSCC, 2022)