Threshold Voltage Drift and Recovery of SiC Trench MOSFETs During TDDB Stress. - M. Avramenko; L. De Schepper; J.-F. Cano; F. Geenen; Peter Moens; Alberto Marcuzzi; Carlo De Santi; Matteo Meneghini (IRPS, 2024)

Charge Trapping in SiC MOSFETs under Constant Gate Current Stress: Analysis Based on Charge Pumping Measurements. - Alberto Marcuzzi; M. Avramenko; Carlo De Santi; Peter Moens; F. Geenen; Gaudenzio Meneghesso; Enrico Zanoni; Matteo Meneghini (IRPS, 2024)

On the Intrinsic and Extrinsic Reliability Challenges of SiC MOSFETs. - Peter Moens; F. Geenen; M. Avramenko; G. Gomez-Garcia; Kevin Matocha (IRPS, 2024)

Recombination-Driven Interface Trap Generation in SiC MOSFETs Under Constant Voltage and Constant Current Stress. - Alberto Marcuzzi; M. Avramenko; Carlo De Santi; Peter Moens; G. J. Gomez Garcia; A. Feng; T. Grasser; Gaudenzio Meneghesso; Enrico Zanoni; Matteo Meneghini (IRPS, 2025)