SIMS study of silicon oxynitride prepared by oxidation of silicon-rich silicon nitride layer. - M. C. Poon; Y. Gao; Ted Chi-Wah Kok; A. M. Myasnikov; Hei Wong (Microelectron. Reliab., 2001)

Investigation of the surface silica layer on porous poly-Si thin films. - Hei Wong; P. G. Han; M. C. Poon; Y. Gao (Microelectron. Reliab., 2001)

A novel approach for fabricating light-emitting porous polysilicon films. - P. G. Han; Hei Wong; Andy H. P. Chan; M. C. Poon (Microelectron. Reliab., 2002)

Oxynitride gate dielectric prepared by thermal oxidation of low-pressure chemical vapor deposition silicon-rich silicon nitride. - Jackie Chan; Hei Wong; M. C. Poon; Chi-Wah Kok (Microelectron. Reliab., 2003)

Electrical characterization of the hafnium oxide prepared by direct sputtering of Hf in oxygen with rapid thermal annealing. - K. L. Ng; Nian Zhan; Chi-Wah Kok; M. C. Poon; Hei Wong (Microelectron. Reliab., 2003)

Dielectric breakdown characteristics and interface trapping of hafnium oxide films. - Nian Zhan; M. C. Poon; Hei Wong; K. L. Ng; Chi-Wah Kok (Microelectron. J., 2005)