Impact de la Temperature sur la Fiabilite des Composants rf Ldmos de Puissance. - M. Gares; Hichame Maanane; Mohamed Ali Belaïd; Mohamed Masmoudi; Jérôme Marcon; Karine Mourgues; Pierre Bertram; Philippe Eudeline (CCECE, 2006)

Electrical parameters degradation of power RF LDMOS device after accelerated ageing tests. - Mohamed Ali Belaïd; K. Ketata; Mohamed Masmoudi; M. Gares; Hichame Maanane; Jérôme Marcon (Microelectron. Reliab., 2006)

Hot carrier reliability of RF N- LDMOS for S Band radar application. - M. Gares; Hichame Maanane; Mohamed Masmoudi; Pierre Bertram; Jérôme Marcon; Mohamed Ali Belaïd; Karine Mourgues; C. Tolant; Philippe Eudeline (Microelectron. Reliab., 2006)

Reliability study of power RF LDMOS device under thermal stress. - Mohamed Ali Belaïd; K. Ketata; Karine Mourgues; M. Gares; Mohamed Masmoudi; Jérôme Marcon (Microelectron. J., 2007)

Comparative analysis of RF LDMOS capacitance reliability under accelerated ageing tests. - Mohamed Ali Belaïd; K. Ketata; M. Gares; Karine Mourgues; Mohamed Masmoudi; Jérôme Marcon (Microelectron. Reliab., 2007)

Study of hot-carrier effects on power RF LDMOS device reliability. - M. Gares; Mohamed Ali Belaïd; Hichame Maanane; Mohamed Masmoudi; Jérôme Marcon; Karine Mourgues; Philippe Eudeline (Microelectron. Reliab., 2007)

S-parameter performance degradation in power RF N-LDMOS devices due to hot carrier effects. - Mohamed Ali Belaïd; M. Gares; K. Daoud; Philippe Eudeline (Microelectron. Reliab., 2011)

Failure analysis of hot-electron effect on power RF N-LDMOS transistors. - Mohamed Ali Belaïd; M. Gares; K. Daoud; Philippe Eudeline (DTIS, 2012)

Leakage current effects on N-MOSFETs after thermal ageing in pulsed life tests. - Mohamed Ali Belaïd; Ahmed M. Nahhas; M. Gares; K. Daoud; Olivier Latry (Microelectron. J., 2014)

Performance drifts of N-MOSFETs under pulsed RF life test. - Mohamed Ali Belaïd; M. Gares; K. Daoud; Olivier Latry (Microelectron. Reliab., 2014)