Ultra-thin oxides on silicon fabricated using ultra-slow multicharged ion beams. - G. Borsoni; N. Béchu; M. Gros-Jean; Michael L. Korwin-Pawlowski; R. Laffitte; V. Le Roux; L. Vallier; Névine Rochat; C. Wyon (Microelectron. Reliab., 2001)

High-K dielectric deposition in 3D architectures: The case of Ta2O5 deposited with metal-organic precursor TBTDET. - L. Pinzelli; M. Gros-Jean; Y. Bréchet; F. Volpi; A. Bajolet; J.-C. Giraudin (Microelectron. Reliab., 2007)

Impact of bilayer character on High K gate stack dielectrics breakdown obtained by conductive atomic force microscopy. - R. Foissac; S. Blonkowski; M. Kogelschatz; P. Delcroix; M. Gros-Jean; F. Bassani (Microelectron. Reliab., 2013)