Static and low-frequency noise characterization in submicron MOSFETs for memories cells applications. - Nabil Sghaier; M'Hamed Trabelsi; Ne. Sghaier; Liviu Militaru; Abdelkader Souifi; Adel Kalboussi; Noureddine Yacoubi (Microelectron. J., 2006)

Traps centers and deep defects contribution in current instabilities for AlGaN/GaN HEMT's on silicon and sapphire substrates. - Nabil Sghaier; M'Hamed Trabelsi; Noureddine Yacoubi; Jean-Marie Bluet; Abdelkader Souifi; Gérard Guillot; Christophe Gaquière; J. C. DeJaeger (Microelectron. J., 2006)

Analysis of slow traps centres in submicron MOSFETs by random telegraph signal technique. - Nabil Sghaier; Liviu Militaru; M'Hamed Trabelsi; Yacoubi Yacoubi; Souifi Souifi (Microelectron. J., 2007)